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STP3NC70Z STP3NC70ZFP
N-CHANNEL 700V - 4.1 - 2.5A TO-220/TO-220FP Zener-Protected PowerMESHTMIII MOSFET
TYPE STP3NC70Z STP3NC70ZFP
s s
VDSS 700V 700V
RDS(on) < 4.7 < 4.7
ID 2.5 A 2.5 A
s s s
TYPICAL RDS(on) = 4.1 EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP
3 1 2
DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT IGS VESD(G-S) dv/dt (1) VISO Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -65 to 150 150
(*) Limited by Maximum Temperature allowed
Value STP3NC70Z 700 700 25 2.5 1.6 10 65 0.52 50 1.5 3 2500 2.5 (*) 1.6 (*) 10 35 0.28 STP3NC70ZFP
Unit V V V A A A W W/C mA KV V/ns V C C 1/10
(*)Pulse width limited by safe operating area
(1) ISD 2.5A, di/dt 100A/s, VDD V (BR)DSS, T j T JMAX
STP3NC70Z/STP3NC70ZFP
THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.92 62.5 300 TO-220FP 3.57 C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 2.5 150 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 A, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 700 0.8 1 50 10 Typ. Max. Unit V V/C A A A
BVDSS/TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0)
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 1.25 A Min. 3 Typ. 4 4.1 Max. 5 4.7 Unit V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 1.25A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2 530 50 7 Max. Unit S pF pF pF
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STP3NC70Z/STP3NC70ZFP
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 350 V, ID = 1.25 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 2.5A, VGS = 10V Min. Typ. 14 11 17 4 7 24 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 560V, ID = 2.5 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 16 33 40 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.5 A, VGS = 0 ISD = 2.5 A, di/dt = 100A/s, VDD = 27V, Tj = 150C (see test circuit, Figure 5) 175 0.6 7.5 Test Conditions Min. Typ. Max. 2.5 10 1.6 Unit A A V ns C A
GATE-SOURCE ZENER DIODE
Symbol BVGSO T Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs= 1mA (Open Drain) T=25C Note(3) ID = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/C
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. VBV = T (25-T) BVGSO(25)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP3NC70Z/STP3NC70ZFP
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
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STP3NC70Z/STP3NC70ZFP
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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STP3NC70Z/STP3NC70ZFP
Source-drain Diode Forward Characteristics
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STP3NC70Z/STP3NC70ZFP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP3NC70Z/STP3NC70ZFP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
D
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
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F2
F
G
H2
STP3NC70Z/STP3NC70ZFP
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1
D
F
G1 H
F2
L2 L5
E
123
L4
G
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STP3NC70Z/STP3NC70ZFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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